Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = −50 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −1.3 A
VGS = −10 V, ID = −2.5 A
VDS = −10 V, ID = −2.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
VDD ≈ −40 V, VGS = −10 V,
Gate−source charge
Qgs
ID = −5 A
Gate−drain (“miller”) charge
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
—
—
IDR = −5 A, VGS = 0 V
Marking
2SJ537
Min Typ. Max Unit
—
—
±10
μA
—
— −100 μA
−50 —
—
V
−0.8 —
−2.0
V
— 0.27 0.34
Ω
— 0.16 0.19
1.5 3.5
—
S
— 470 —
—
60
—
pF
— 210 —
—
25
—
—
35
—
ns
—
20
—
— 120 —
—
18
—
—
13
—
nC
—
5
—
Min Typ. Max Unit
—
—
−5
A
—
— −15
A
—
—
1.5
V
J537
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Lot No.
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
Note 2
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29