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Part Name
Description
2SJ537 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ537
Silicon P Channel MOS Type (L2−π−MOSVI) Effect Transistor
Toshiba
2SJ537 Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
1
0.1
0.01
0.001
100
μ
r
th
−
t
w
Single Pulse
1m
10m
100m
1
Pulse width t
w
(S)
Duty=t/T
Rth(ch-a)=138
℃
/W
10
100
2SJ537
SAFE OPERATING AREA
−
100
I
D
max (pulse)
*
−
10
I
D
max (continuous)
100
μ
s
*
1 ms
*
−
1
DC OPEATION
T
a
=25°C
−
0.1
※
Single pulse
Ta=25
℃
Curves must be derated linearly
with increase in temperature
.
VDSS max
−
0.01
−
0.01
−
0.1
−
1
−
10
Drain-source voltage VDS (V)
−
100
5
2009-09-29
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