EBD10RD4ABFA View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

Manufacturer

EBD10RD4ABFA

1GB Registered DDR SDRAM DIMM

Elpida Memory, Inc 

EBD10RD4ABFA

DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)

Parameter

Symbol

Grade

max.

Unit Test condition

Notes

Operating current (ACTV-PRE) IDD0

Operating current

(ACTV-READ-PRE)

IDD1

Idle power down standby current IDD2P

Floating idle standby current

IDD2F

Quiet idle standby current

Active power down

standby current

Active standby current

Operating current

(Burst read operation)

Operating current

(Burst write operation)

Auto refresh current

IDD2Q

IDD3P

IDD3N

IDD4R

IDD4W

IDD5

Self refresh current

Operating current

(4 banks interleaving)

IDD6

IDD7A

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

-6B

-7A, -7B

3165

2830

3525

3190

520

454

1185

1030

915

850

825

760

1725

1480

4065

3460

4065

3460

5685

5260

538

472

8025

6880

mA

CKE ≥ VIH,

tRC = tRC (min.)

1, 2, 9

CKE ≥ VIH, BL = 4,

mA CL = 3.5,

1, 2, 5

tRC = tRC (min.)

mA CKE ≤ VIL

4

mA

CKE ≥ VIH, /CS ≥ VIH,

DQ, DQS, DM = VREF

4, 5

mA

CKE ≥ VIH, /CS ≥ VIH,

DQ, DQS, DM = VREF

4, 10

mA CKE ≤ VIL

3

mA

CKE ≥ VIH, /CS ≥ VIH

tRAS = tRAS (max.)

3, 5, 6

mA

CKE ≥ VIH, BL = 2,

CL = 3.5

1, 2, 5, 6

mA

CKE ≥ VIH, BL = 2,

CL = 3.5

1, 2, 5, 6

mA

tRFC = tRFC (min.),

Input ≤ VIL or ≥ VIH

mA

Input ≥ VDD – 0.2 V

Input ≤ 0.2 V

mA BL = 4

5, 6, 7

Notes. 1. These IDD data are measured under condition that DQ pins are not connected.

2. One bank operation.

3. One bank active.

4. All banks idle.

5. Command/Address transition once per one cycle.

6. Data/Data mask transition twice per one cycle.

7. 4 banks active. Only one bank is running at tRC = tRC (min.)

8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.

9. Command/Address transition once every two clock cycles.

10. Command/Address stable at ≥ VIH or ≤ VIL.

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)

(DDR SDRAM Component Specification)

Parameter

Input leakage current

Output leakage current

Output high current

Output low current

Symbol

IL

IOZ

IOH

IOL

min.

–2

–5

–15.2

15.2

max.

2

5

—

—

Unit

Test condition

µA

VDD ≥ VIN ≥ VSS

µA

VDDQ ≥ VOUT ≥ VSS

mA

VOUT = 1.95V

mA

VOUT = 0.35V

Notes

Preliminary Data Sheet E0274E40 (Ver. 4.0)

11

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