28F004BX-B View Datasheet(PDF) - Intel

Part Name

Description

Manufacturer

28F004BX-B

4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY

Intel 

28F400BX-T B 28F004BX-T B

BLOCK ERASE AND WORD BYTE WRITE PERFORMANCE

VPP e 12 0V g10%

Parameter

Notes

28F400BX-60

28F004BX-60

28F400BX-80

28F004BX-80

28F400BX-120

28F004BX-120

Unit

Min Typ(1) Max Min Typ(1) Max Min Typ(1) Max

Boot Parameter

2

Block Erase Time

5 8 40

5 8 40

5 8 40 s

Main Block

2

Erase Time

14

60

14

60

14

60

s

Main Block Byte

2

Program Time

6 0 20

6 0 20

6 0 20 s

Main Block Word

2

Program Time

3 0 10

3 0 10

3 0 10 s

NOTES

1 25 C

2 Excludes System-Level Overhead

EXTENDED TEMPERATURE OPERATION

AC CHARACTERISTICS WE Controlled Write Operations(1)

Symbol

Versions(4)

Parameter

T28F400BX-80(9)

T28F004BX-80(9)

Unit

Notes

Min

Max

tAVAV

tWC

Write Cycle Time

tPHWL

tPS

RP High Recovery to

WE Going Low

80

ns

220

ns

tELWL

tCS

CE Setup to WE Going Low

0

ns

tPHHWH

tPHS

RP VHH Setup to WE

68

100

ns

Going High

tVPWH

tVPS

VPP Setup to WE Going High

58

100

ns

tAVWH

tAS

Address Setup to WE

3

60

ns

Going High

tDVWH

tDS

Data Setup to WE Going High

4

60

ns

tWLWH

tWP

WE Pulse Width

60

ns

tWHDX

tDH

Data Hold from WE High

4

0

ns

tWHAX

tAH

Address Hold from WE High

3

10

ns

tWHEH

tCH

CE Hold from WE High

10

ns

tWHWL

tWPH WE Pulse Width High

20

ns

tWHQV1

Duration of Word Byte

25

7

ms

Programming Operation

tWHQV2

Duration of Erase Operation (Boot) 2 5 6

04

s

43

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