28F004BX-B View Datasheet(PDF) - Intel
Part Name
Description
Manufacturer
28F004BX-B Datasheet PDF : 50 Pages
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28F400BX-T B 28F004BX-T B
AC CHARACTERISTICS CE -CONTROLLED WRITE OPERATIONS(1 9) (Continued)
Versions
VCC g 5%
VCC g10%
28F400BX-60(10)
28F004BX-60(10)
28F400BX-60(11) 28F400BX-80(11) 28F400BX-120(11) Unit
28F004BX-60(11) 28F004BX-80(11) 28F004BX-120(11)
Symbol
Parameter Notes Min
Max
Min
Max
Min
Max
Min
Max
tIR Input Rise Time
tIF Input Fall Time
10
10
10
10
10
10
10 ns
10 ns
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE and WE in systems where
CE defines the write pulse-width (within a longer WE timing waveform) all set-up hold and inactive WE times
should be measured relative to the CE waveform
2 3 4 5 6 7 8 Refer to AC Characteristics notes for WE -Controlled Write Operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
Characteristics during Read Mode
10 See High Speed Test Configuration
11 See Standard Test Configuration
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS CE -CONTROLLED WRITE OPERATIONS(1 9)
Symbol
Versions
Parameter
T28F400BX-80(10)
T28F004BX-80(10)
Unit
Notes
Min
Max
tAVAV
tWC Write Cycle Time
80
ns
tPHEL
tPS
RP High Recovery to CE Going Low
220
ns
tWLEL
tWS WE Setup to CE Going Low
0
ns
tPHHEH tPHS RP VHH Setup to CE Going High
68
100
ns
tVPEH
tVPS VPP Setup to CE Going High
58
100
ns
tAVEH
tAS
Address Setup to CE Going High
3
60
ns
tDVEH
tDS
Data Setup to CE Going High
4
60
ns
tELEH
tCP
CE Pulse Width
60
ns
tEHDX
tDH
Data Hold from CE High
4
0
ns
tEHAX
tAH
Address Hold from CE High
3
10
ns
tEHWH tWH WE Hold from CE High
10
ns
tEHEL
tCPH CE Pulse Width High
20
ns
tEHQV1
Duration of Word Byte Programming
25
7
ms
Operation
47
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