28F004BX-B View Datasheet(PDF) - Intel

Part Name

Description

Manufacturer

28F004BX-B

4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY

Intel 

28F400BX-T B 28F004BX-T B

EXTENDED TEMPERATURE OPERATION

AC CHARACTERISTICS CE -CONTROLLED WRITE OPERATIONS(1 9) (Continued)

Symbol

Versions

Parameter

Notes

T28F400BX-80(10)

T28F004BX-80(10)

Min

Max

Unit

tEHQV2

Duration of Erase Operation (Boot)

256

04

tEHQV3

Duration of Erase Operation (Parameter) 2 5

04

tEHQV4

Duration of Erase Operation (Main)

25

07

tQVVL

tVPH VPP Hold from Valid SRD

58

0

tQVPH tPHH RP VHH Hold from Valid SRD

68

0

tPHBR

Boot-Block Relock Delay

7

tIR

Input Rise Time

tIF

Input Fall Time

s

s

s

ns

ns

100

ns

10

ns

10

ns

NOTES

1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE and WE in systems where

CE defines the write pulse-width (within a longer WE timing waveform) all set-up hold and inactive WE times

should be measured relative to the CE waveform

2 3 4 5 6 7 8 Refer to AC Characteristics for WE -Controlled Write Operations

9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC

Characteristics during Read Mode

10 See Standard Test Configuration

ORDERING INFORMATION

VALID COMBINATIONS

E28F400BX-T60

PA28F400BX-T60

E28F400BX-B60

PA28F400BX-B60

E28F400BX-T80

PA28F400BX-T80

E28F400BX-B80

PA28F400BX-B80

E28F400BX-T120 PA28F400BX-T120

E28F400BX-B120 PA28F400BX-B120

TE28F400BX-T80

TE28F400BX-B80

TB28F400BX-T80

TB28F400BX-B80

290451 – 18

VALID COMBINATIONS

E28F004BX-T60

E28F004BX-T80

E28F004BX-B60

E28F004BX-B80

TE28F004BX-T80

TE28F004BX-B80

E28F004BX-T120

E28F004BX-B120

290451 – 30

49

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