K4T1G044QQ View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4T1G044QQ Datasheet PDF : 44 Pages
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K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
DDR2 SDRAM
6.0 Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
VDDQ
VDDL
Voltage on VDD pin relative to VSS
Voltage on VDDQ pin relative to VSS
Voltage on VDDL pin relative to VSS
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
V
1
V
1
V
1
VIN, VOUT
TSTG
Voltage on any pin relative to VSS
Storage Temperature
- 0.5 V ~ 2.3 V
-55 to +100
V
1
°C
1, 2
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
7.0 AC & DC Operating Conditions
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
Min.
Rating
Typ.
Max.
Units
Notes
VDD
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VTT
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal
to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5
x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
11 of 44
Rev. 1.01 November 2007
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