DDR SDRAM (Rev.0.0)
Sep.'99 Preliminary
MITSUBISHI LSIs
M2S56D20/ 30 TP
256M Double Data Rate Synchronous DRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 3.7
V
VddQ Supply Voltage for Output with respect to VssQ
-0.5 ~ 3.7
V
VI
Input Voltage
with respect to Vss -0.5 ~ Vdd+0.5
V
VO
Output Voltage
with respect to VssQ -0.5 ~ VddQ+0.5 V
IO
Output Current
50
mA
Pd
Power Dissipation
Ta = 25 °C
1000
mW
Topr
Operating Temperature
0 ~ 70
°C
Tstg
Storage Temperature
-65 ~ 150
°C
DC OPERATING CONDITIONS
(Ta=0 ~ 70°C, unless otherwise noted)
Symbol
Parameter
Limits
Min.
Typ.
Vdd
Supply Voltage
2.3
2.5
VddQ
Supply Voltage for Output
2.3
2.5
Vref
Input Reference Voltage
1.15
1.25
VIH(DC)
High-Level Input Voltage
Vref + 0.18
VIL(DC)
Low-Level Input Voltage
-0.3
VIN(DC) Input Voltage Level, CLK and /CLK
-0.3
VID(DC) Input Differential Voltage, CLK and /CLK
0.36
VTT
I/O Termination Voltage
Vref - 0.04
Max.
Unit Notes
2.7
V
2.7
V
1.35
V5
VddQ+0.3 V
Vref - 0.18 V
VddQ + 0.3 V
VddQ + 0.6 V 7
Vref + 0.04 V 6
CAPACITANCE
(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
CI(A) Input Capacitance, address pin
CI(C) Input Capacitance, control pin
CI(K) Input Capacitance, CLK pin
CI/O I/O Capacitance, I/O, DQS, DM pin
CO(QF) Output Capacitance, /QFC
VI=1.25v
f=100MHz
VI=25mVrms
Limits
Min. Max.
2.5
3.5
2.5
3.5
2.5
3.5
4.0
5.5
2.5
3.5
Unit Notes
pF 11
pF 11
pF 11
pF 11
pF 11
MITSUBISHI
ELECTRIC
16