M2S56D20TP-10 View Datasheet(PDF) - Mitsumi

Part Name

Description

Manufacturer

M2S56D20TP-10

256M Double Data Rate Synchronous DRAM

Mitsumi 

DDR SDRAM (Rev.0.0)

Sep.'99 Preliminary

MITSUBISHI LSIs

M2S56D20/ 30 TP

256M Double Data Rate Synchronous DRAM

AC TIMING REQUIREMENTS(Continues)

(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)

AC Characteristics

Symbol

Parameter

tRAS

Row Active time

tRC

Row Cycle time(operation)

tRFC

Auto Ref. to Active/Auto Ref. command period

tRCD Row to Column Delay

tRP

Row Precharge time

tRRD Act to Act Delay time

tWR

Write Recovery time

tDAL

Auto Precharge write recovery + precharge time

tWTR Internal Write to Read Command Delay

tXSNR Exit Self Ref. to non-Read command

tXSRD Exit Self Ref. to -Read command

tXPNR Exit Power down to command

tXPRD Exit Power down to -Read command

tREFI Average Periodic Refresh interval

-75

Min. Max.

45 120,000

65

75

20

20

15

15

35

1

75

200

1

1

7.8

-10

Min. Max. Unit Notes

50 120,000 ns

70

ns

80

ns

20

ns

20

ns

15

ns

15

ns

35

ns

1

tCK

80

ns

200

tCK

1

tCK

1

tCK 18

7.8

us 17

Output Load Condition

VOUT

25Ω

VTT=VREF

VTT=VREF

10cm

50Ω

Zo=50Ω

50Ω

30pF

VREF

DQS

DQ

Output Timing

Measurement

Reference Point

VREF

VREF

MITSUBISHI

ELECTRIC

19

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