T0
CLK
tCK
CKE
tCKS tCKH
tCMS tCMH
COMMAND PRECHARGE
DQM1
tAS tAH
ADDRESS
BANK(S)
High-Z
DQ
Precharge all
active banks.
T1
tCH
SELF REFRESH MODE
T2
tCL
((
))
tCKS
((
> tRAS ) )
Tn + 1
((
))
( ( To + 1
))
((
))
((
))
((
))
tCKS
NOP
((
AUTO
))
REFRESH
((
))
((
))
((
))
((
))
NOP ( (
))
((
))
((
))
((
((
))
))
((
((
))
))
((
((
))
))
tRP
tXSR
Enter self
refresh mode.
Exit self refresh mode.
(Restart refresh time base.)
CLK stable prior to exiting
self refresh mode.
16Mb: x16
IT SDRAM
To + 2
AUTO
REFRESH
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL*
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
-6
MIN MAX
1
2
2.5
2.5
6
8
20
-7
MIN MAX
1
2
2.75
2.75
7
10
25
-8A
MIN MAX
1
2
3
3
8
13
25
UNITS
ns
ns
ns
ns
ns
ns
ns
SYMBOL*
tCKH
tCKS
tCMH
tCMS
tRAS
tRP
tXSR
-6
MIN MAX
1
2
1
2
42 120,000
18
80
-7
MIN MAX
1
2
1
2
42 120,000
21
80
-8A
MIN MAX UNITS
1
ns
2
ns
1
ns
2
ns
48 120,000 ns
24
ns
80
ns
*CAS latency indicated in parentheses.
NOTE: 1. DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte.
16Mb: x16 IT SDRAM
16MSDRAMx16IT.p65 – Rev. 5/99
38
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999, Micron Technology, Inc.