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MT48LC8M32B2 View Datasheet(PDF) - Micron Technology

Part Name
Description
Manufacturer
MT48LC8M32B2
Micron
Micron Technology Micron
MT48LC8M32B2 Datasheet PDF : 55 Pages
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CONCURRENT AUTO PRECHARGE
An access command to (READ or WRITE) another
bank while an access command with auto precharge
enabled is executing is not allowed by SDRAMs, unless
the SDRAM supports CONCURRENT AUTO
PRECHARGE. Micron SDRAMs support CONCURRENT
AUTO PRECHARGE. Four cases where CONCURRENT
AUTO PRECHARGE occurs are defined below.
READ with auto precharge
1. Interrupted by a READ (with or without auto
precharge): A READ to bank m will interrupt a READ
PRELIMINARY
256Mb: x32
SDRAM
on bank n, CAS latency later. The PRECHARGE to
bank n will begin when the READ to bank m is regis-
tered (Figure 24).
2. Interrupted by a WRITE (with or without auto
precharge): A WRITE to bank m will interrupt a READ
on bank n when registered. DQM should be used
two clocks prior to the WRITE command to prevent
bus contention. The PRECHARGE to bank n
will begin when the WRITE to bank m is registered
(Figure 25).
Figure 24
READ With Auto Precharge Interrupted by a READ
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
NOP
READ - AP
BANK n
NOP
READ - AP
BANK m
NOP
NOP
BANK n
Internal
States
BANK m
Page Active
READ with Burst of 4
Page Active
Interrupt Burst, Precharge
t RP - BANK n
READ with Burst of 4
NOP
NOP
Idle
tRP - BANK m
Precharge
ADDRESS
DQ
NOTE: DQM is LOW.
BANK n,
COL a
BANK m,
COL d
CAS Latency = 3 (BANK n)
DOUT
a
DOUT
a+1
CAS Latency = 3 (BANK m)
DOUT
d
DOUT
d+1
Figure 25
READ With Auto Precharge Interrupted by a WRITE
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
READ - AP
BANK n
NOP
NOP
BANK n
Page
Active
READ with Burst of 4
Internal
States
BANK m
Page Active
NOP
WRITE - AP
NOP
NOP
BANK m
Interrupt Burst, Precharge
tRP - BANK n
WRITE with Burst of 4
NOP
Idle
t WR - BANK m
Write-Back
ADDRESS
1
DQM
BANK n,
COL a
BANK m,
COL d
DQ
DOUT
DIN
a
d
DIN
d+1
CAS Latency = 3 (BANK n)
NOTE: 1. DQM is HIGH at T2 to prevent DOUT-a+1 from contending with DIN-d at T4.
DIN
d+2
DIN
d+3
DON’T CARE
09005aef80cd8e48
256MbSDRAMx32.p65 – Rev. B; Pub. 03/04
26
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.

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