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RF2705 View Datasheet(PDF) - RF Micro Devices

Part Name
Description
Manufacturer
RF2705
RFMD
RF Micro Devices RFMD
RF2705 Datasheet PDF : 24 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
RF2705
Parameter
Specification
Unit
Min.
Typ.
Max.
Condition
General Specifications
Operating Range
Supply Voltage 2.7
3.3
V
Temperature -40
+85
°C
Current Consumption
Refer to Logic Control Truth Table for Mode
Control Pin Voltages.
Sleep
<1
10
µA
Wideband FLOx1 (high power)
114
mA
GC = 2.0 V
*
85
mA
GC = 0.2 V
(medium power)
89
mA
GC = 2.0 V
*
54
mA
GC = 0.2 V
(low power)
63
mA
GC=2.0V. See Note 1.
*
42
mA
GC=0.2V. See Note 1.
Wideband FLOx2 (high power)
110
mA
GC = 2.0 V
84
mA
GC = 0.2 V
(medium power)
80
mA
GC = 2.0 V
53
mA
GC = 0.2 V
(low power)
54
mA
GC=2.0V. See Note 1.
41
mA
GC=0.2V. See Note 1.
High Band FLOx2
72
mA
GC = 2.0 V
Low Band FLO/2
82
mA
GC = 2.0 V
High Band Bypass
23
mA
Low Band Bypass
22
mA
High Band FLOx1
76
mA
GC = 2.0 V
Low Band FLOx1
74
mA
GC = 2.0 V
Logic Levels
Input Logic 0
Input Logic 1
Logic Pins Input Current
LO Input Ports
0
0.4
V
1.4
VCC
V
<1.0
µA
CMOS inputs
LO LB Input Frequency Range
800
1000
MHz
LO HB Input Frequency Range
1600
2000
MHz
Input Impedance
50
Externally matched
I/Q Baseband Inputs
Baseband Input Voltage
1.15
1.25
V
Common mode voltage
Baseband Input Level
EDGE
1.2
VP-P
Differential
W-CDMA
0.8
VP-P
1DPCCH+1DPDCH. See Note 1.
GMSK
1.0
VP-P
Differential
Baseband Input Impedance
100 k||1 pF
Measured at 100kHz
Input Bandwidth
EDGE 0.7
1.0
MHz
W-CDMA 8.0
11.0
MHz
Baseband Filter Attenuation
EDGE 20
dB
At 20MHz
W-CDMA 10
dB
At 40MHz
Baseband Input DC Current
-10
0
10
µA
Gain Control
Gain Control Voltage
0.2
2.2
V
Gain Control Impedance
10
k
Note 1: In low power mode it is recommended that the IQ level be reduced to 0.4VP-P. If IQ level is >0.4VP-P, this mode should be used
for W-CDMA TX power levels below -20dBm (measured at antenna).
Rev A4 041026
5-123

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