TB2110FN View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TB2110FN

TOSHIBA Bi−CMOS Integrated Circuit Silicon Monolithic

Toshiba 

Maximum Ratings (Ta = 25°C)

Characteristic

Supply voltage

Input voltage

Power dissipation

Operating temperature

Storage temperature

Symbol

Rating

Unit

VDD

VIN

PD

Topr

Tstg

-0.3~4.5

V

-0.3~ VDD+0.3

V

400

mW

-20~75

°C

-65~150

°C

TB2110FN

Electrical Characteristics

(unless otherwise specified, Ta = -20~75°C, VCC = 1.0~2.5V, VDD = 2.4V)

Characteristic

Operating

power supply

voltage

Biplor unit

MOS unit

Operating power supply

current

Symbol

VCC

VDD

ICC

IDD

Test

Cir-

Test Condition

cuit

PLL operation

— (normal operating)

Step-up control circuit operating

—

PLL operation

(normal operating), TV mode

—

PLL operation

(normal operating), TV mode

Min. Typ. Max. Unit

1.2

1.5

2.5

V

2.2

2.4

3.6

—

18

40

mA

—

1.5

7

(Stand-by mode)

Operating power supply

current

ICS

— VCC = 1.5V

—

30

50

µA

(Operating frequency)

Crystal oscillation

frequency

TV in

FM in

SW in

AM in

IF-FM

IF-AM

(Input voltage)

TV in

FM in

SW in

AM in

IF-FM

IF-AM

fXT

fTV

fFM

fSW

fAM

fIF-FM

fIF-AM

—

Crystal oscillator connected to

XI and XO pins.

— TV mode

— FM mode

— SW mode

— AM mode

— IF-FM

— IF-AM

—

75

—

kHz

50

~

250 MHz

40

~

150 MHz

3

~

40 MHz

0.5

~

10 MHz

8

~

16 MHz

0.3

~

1.0 MHz

VTVin

VFMin

VSWin

VAMin

VIF-FM

VIF-AM

— TV mode

— FM mode

— SW mode

— AM mode

— IF-FM

— IF-AM

25

~

300 mVrms

16

2002-10-30

Share Link: