TB2110FN View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TB2110FN

TOSHIBA Bi−CMOS Integrated Circuit Silicon Monolithic

Toshiba 

(OT-1~OT-4 open-collector output current)

Characteristic

Output

current

“L” level

Symbol

IOL1

Test

Cir-

Test Condition

cuit

— VOL = 0.2V

TB2110FN

Min. Typ. Max. Unit

1.0 3.0

—

mA

(Data, clock, period, I / O)

Input

voltage

Input

current

Output

current

“H” level

“L” level

“H” level

“L” level

“H” level

“L” level

VIH

VIL

IIH

IIL

IOH2

IOL2

—

—

—

—

— VIH = 2.4V

— VIL = 0.0V

— VOH = 2.0V, only data pin

— VOL = 0.4V, only data pin

1.7

~

VDD

V

0.0

~

0.5

—

— ±0.5

µA

—

— ±1.0

-0.2 -1.0 —

µA

0.2 1.0

—

(DO1, DO2)

Input

voltage

“H” level

“L” level

Tri-state leak current

Auto clear voltage

VCONT output current

Standby release

Standby mode

IOH3

IOL3

ITL

— VOH = 2.0V

— VOL = 0.4V

— VTLH = 2.4V, VTLL = 0.0V

-0.2 -1.0 —

mA

0.2 1.0

—

—

— ±0.1 µA

VCL1

VCL2

— Clear release voltage

— Clear voltage

—

—

1.9

V

1.4

—

—

ICONT

VSTOFF

VSTON

Boosting voltage transistor drive

— current

VCONT = 0.8V

— Standby mode released

— Placed in standby mode

100 150

—

µA

0.7

~

VCC

V

0.0

~

0.6

V

17

2002-10-30

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