TS2012IQT View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

TS2012IQT

Filter-free stereo 2x2.8W class D audio power amplifer

STMicroelectronics 

TS2012

3

Electrical characteristics

Electrical characteristics

3.1

Electrical characteristic tables

Table 5. VCC = +5V, GND = 0V, Vic=2.5V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameters and test conditions

Min. Typ. Max. Unit

Supply current

ICC

No input signal, no load, both channels

ISTBY

Voo

Po

THD + N

Efficiency

PSRR

Crosstalk

CMRR

Gain

Zin

Standby current

No input signal, VSTBY = GND

Output offset voltage

Floating inputs, G = 6dB, RL = 8Ω

Output power

THD + N = 1% max, f = 1kHz, RL = 4Ω

THD + N = 1% max, f = 1kHz, RL = 8Ω

THD + N = 10% max, f = 1kHz, RL = 4Ω

THD + N = 10% max, f = 1kHz, RL = 8Ω

Total harmonic distortion + noise

Po = 0.8W, G = 6dB, f =1kHz, RL = 8Ω

Efficiency per channel

Po = 2.2W, RL = 4Ω +15µH

Po = 1.25 W, RL = 8Ω+15µH

Power supply rejection ratio with inputs grounded

Cin=1µF (1),f = 217Hz, RL = 8Ω, Gain=6dB,

Vripple = 200mVpp

Channel separation

Po = 0.9W, G = 6dB, f =1kHz, RL = 8Ω

Common mode rejection ratio

Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB,

ΔVICM = 200mVpp

Gain value

G1 = G0 = VIL

G1 = VIL & G0 = VIH

G1 = VIH & G0 = VIL

G1 = G0 = VIH

Single ended input impedance

All gains, refered to ground

FPWM

SNR

tWU

tSTBY

Pulse width modulator base frequency

Signal to noise ratio (A-weighting)

Po = 1.3W, G = 6dB, RL = 8Ω

Wake-up time

Standby time

5

8

mA

0.2

2

µA

25

mV

2.2

1.35

W

2.8

1.65

0.07

%

81

%

89

70

dB

90

dB

70

dB

5.5

6

6.5

11.5

12

12.5

dB

17.5

18

18.5

23.5

24

24.5

24

30

36

kΩ

190 280 370

kHz

99

dB

1

3

ms

1

ms

7/30

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