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TS2012IQT View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS2012IQT Datasheet PDF : 30 Pages
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TS2012
Electrical characteristics
Table 6. VCC = +3.6V, GND = 0V, Vic=1.8V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Unit
ICC
Supply current
No input signal, no load, both channels
ISTBY
Voo
Po
THD + N
Efficiency
PSRR
Crosstalk
CMRR
Gain
Zin
Standby current
No input signal, VSTBY = GND
Output offset voltage
Floating inputs, G = 6dB, RL = 8Ω
Output power
THD + N = 1% max, f = 1kHz, RL = 4Ω
THD + N = 1% max, f = 1kHz, RL = 8Ω
THD + N = 10% max, f = 1kHz, RL = 4Ω
THD + N = 10% max, f = 1kHz, RL = 8Ω
Total harmonic distortion + noise
Po = 0.4W, G = 6dB, f =1kHz, RL = 8Ω
Efficiency per channel
Po = 1.15W, RL = 4Ω +15µH
Po = 0.68W, RL = 8Ω+15µH
Power supply rejection ratio with inputs grounded
Cin=1µF (1),f = 217Hz, RL = 8Ω, Gain=6dB,
Vripple = 200mVpp
Channel separation
Po = 0.5W, G = 6dB, f =1kHz, RL = 8Ω
Common mode rejection ratio
Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB,
ΔVICM = 200mVpp
Gain value
G1 = G0 = VIL
G1 = VIL & G0 = VIH
G1 = VIH & G0 = VIL
G1 = G0 = VIH
Single ended input impedance
All gains, referred to ground
FPWM
SNR
tWU
tSTBY
Pulse width modulator base frequency
Signal to noise ratio (A-weighting)
Po = 0.65W, G = 6dB, RL = 8Ω
Wake-up time
Standby time
3.3
6.5
mA
0.2
2
µA
25
mV
1.15
0.68
W
1.3
0.9
0.05
%
80
%
88
70
dB
90
70
dB
5.5
6
6.5
11.5
12
12.5
dB
17.5
18
18.5
23.5
24
24.5
24
30
36
kΩ
190 280 370
kHz
96
dB
1
3
ms
1
ms
9/30

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