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AD9875-EB View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
AD9875-EB Datasheet PDF : 24 Pages
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AD9875
AINP
AINN
SHA
GAIN
SHA
A/D
GAIN
A/D D/A
A/D D/A
CORRECTION LOGIC
AD9875
Figure 2. ADC Theory of Operation
The digital data outputs of the ADC are represented in two’s
complement format. They saturate to full-scale or zero when the
input signal exceeds the input voltage range.
The two’s complement data format is shown below:
011 . . 11: Maximum
000 . . 01: Midscale + 1 LSB
000 . . 00: Midscale
111 . . 11: Midscale – 1 LSB
111 . . 10: Midscale – 2 LSB
100 . . 00: Minimum
The Maximum value will be output from the ADC when the
Rx+ input is 1V or more greater than the Rx– input. The Mini-
mum value will be output from the ADC when the Rx– input is
1 V or more greater than the Rx+ input. This results in a full-scale
ADC voltage of 2 Vppd.
The data can be translated to straight binary data format by
simply inverting the most significant bit.
The best ADC performance will be achieved when the ADC
clock source is selected from fOSCIN and fOSCIN is provided from
a low jitter clock source. The amount of degradation from jitter
on the ADC clock will depend on how quickly the input is varying
at the sampling instance. TPC 36 charts this effect in the form
of ENOB vs. input frequency for the two clocking scenarios.
The maximum sample rate of the ADC in full-precision mode,
that is outputting 10 bits, is 55 MSPS. TPC 33 shows the ADC
performance in ENOB vs. fADCCLK. The maximum sample rate
of the ADC in half-precision mode, that is outputting five bits,
is 64 MSPS. The timing of the interface is fully described in the
Receive Timing section of this data sheet.
DIGITAL HPF
Following the ADC there is a bypassable digital HPF. The
response is a single pole IIR HPF. The transfer function is
approximately:
H(z) = (Z – 0.99994)/(Z – 0.98466)
Where the sampling period is equal to the ADC clock period.
This results in a 3 dB frequency approximately 1/400th of the
ADC sampling rate. The transfer functions are plotted for
32 MSPS and 50 MSPS in TPC 31 and TPC 32.
The digital HPF introduces a 1 ADC clock cycle latency. If the
HPF function is not desired, the HPF can be bypassed and the
latency will not be incurred.
CLOCK AND OSCILLATOR CIRCUITRY
The AD9875’s internal oscillator generates all sampling clocks
from a fundamental frequency quartz crystal. Figure 3a shows
how the quartz crystal is connected between OSCIN (Pin 1) and
XTAL (Pin 48) with parallel resonant load capacitors as specified
by the crystal manufacturer. The internal oscillator circuitry can
also be overdriven by a TTL level clock applied to OSCIN with
XTAL left unconnected.
The PLL has a frequency capture range between 10 MHz and 64 MHz.
VOLTAGE REGULATOR CONTROLLER
The AD9875 contains an on-chip voltage regulator controller
(VRC) for providing a linear 1.3 V supply for low voltage digital
circuitry or other external use. The VRC consists of an op amp
and a resistive voltage divider. As shown in Figure 3b, the resis-
tive divider establishes a voltage of 1.3 V at the inverting input
of the amplifier when DVDD is equal to its nominal voltage of
3.3 V. The feedback loop around the op amp will adjust the gate
voltage such that the voltage at the FB pin, VFB, will be equal to
the voltage at the inverting input of the op amp.
AD9875
XTAL
OSCIN
C1
XTAL
Y1
C2
Figure 3a. Connections for Fundamental Mode Crystal
3.3V
DVDD
2R
AD9875
1.3R
GATE
S
G SI2301
D
VFB = 1.3V
FB
VOUT
C
Figure 3b. Connections for a 1.3 V Linear Regulator
The maximum current output from the circuit is largely depen-
dent on the MOSFET device. For the SI2301 shown, 250 mA
can be delivered. The regulated output voltage should have bulk
decoupling and high frequency decoupling capacitors to ground
as required by the load. The regulator circuit will be stable for
capacitive loads between 0.1 µF and 47 µF.
It should be noted that the regulated output voltage, VFB, is
proportional to DVDD. Therefore, the percentage variation in
DVDD will also be seen at the regulated output voltage. The
load regulation is roughly equal to the on resistance of the
MOSFET device chosen. For the SI2301, this is about 60 m.
REV. 0
–17–

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