AT89C5131A-M(2005) View Datasheet(PDF) - Atmel Corporation

Part Name

Description

Manufacturer

AT89C5131A-M
(Rev.:2005)

8-bit Flash Microcontroller with Full Speed USB Device

Atmel Corporation 

Program/Code

Memory

The AT89C5130A/31A-M implement 16/ 32 Kbytes of on-chip program/code memory.

Figure 11 shows the split of internal and external program/code memory spaces

depending on the product.

The Flash memory increases EPROM and ROM functionality by in-circuit electrical era-

sure and programming. Thanks to the internal charge pump, the high voltage needed for

programming or erasing Flash cells is generated on-chip using the standard VDD volt-

age. Thus, the Flash Memory can be programmed using only one voltage and allows In-

application Software Programming commonly known as IAP. Hardware programming

mode is also available using specific programming tool.

Figure 11. Program/Code Memory Organization

FFFFh

FFFFh

48 Kbytes

External Code

32 Kbytes

External Code

4000h

3FFFh

16 Kbytes

Flash

8000h

7FFFh

32 Kbytes

Flash

External Code Memory

Access

Memory Interface

0000h

AT89C5130A

0000h

AT89C5131A

Note:

If the program executes exclusively from on-chip code memory (not from external mem-

ory), beware of executing code from the upper byte of on-chip memory (3FFFh/7FFFh)

and thereby disrupting I/O Ports 0 and 2 due to external prefetch. Fetching code constant

from this location does not affect Ports 0 and 2.

The external memory interface comprises the external bus (Port 0 and Port 2) as well as

the bus control signals (PSEN, and ALE).

Figure 12 shows the structure of the external address bus. P0 carries address A7:0

while P2 carries address A15:8. Data D7:0 is multiplexed with A7:0 on P0. Table 35

describes the external memory interface signals.

Figure 12. External Code Memory Interface Structure

AT89C5130A

AT89C5131

P2

A15:8

Flash

EPROM

A15:8

ALE

AD7:0 Latch A7:0

P0

A7:0

PSEN

D7:0

OE

28 AT89C5130A/31A-M

4337C–USB–02/05

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