2SJ483 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ483 Datasheet PDF : 9 Pages
| |||
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Ta = 25°C
Pulset Test
–0.8
–0.6
–0.4
I D = –5 A
–0.2
–2 A
–1 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
2SJ483
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25°C
3 Pulset Test
1
0.3
VGS = –4 V
0.1
–10 V
0.03
0.01
–0.1 –0.3 –1 –3 –10 –30
Drain Current I D (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
0.2
I D = –5 A –1, 2 A
VGS = –4 V
0.1
–10 V
0
–1, 2, 5 A
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
V DS = –10 V
Pulse Test
20
10
Ta = –25 °C
5
25 °C
2
75 °C
1
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
5
Share Link: 