2SJ483 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ483 Datasheet PDF : 9 Pages
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2SJ483
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 20 A / µs
5
VGS = 0, Ta = 25 °C
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
5000
2000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
500
Ciss
Crss
200
Coss
100
50
0
–4
–8 –12 –16 –20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –5V I D = –5 A
–10 V
–10
–25 V
–4
–20
V DS
–30
V GS
–40
V DD = –25 V
–10 V
–5 V
–50
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Switching Characteristics
500
V GS = –10 V, V DD = –10 V
duty < 1 %
200
100
t d(off)
50
tf
20
tr
t d(on)
10
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I D (A)
6
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