S25FL256SDSBFIQ01 View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
S25FL256SDSBFIQ01
Cypress Semiconductor
S25FL256SDSBFIQ01 Datasheet PDF : 144 Pages
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S25FL128S, S25FL256S
Document History Page (Continued)
Document Title: S25FL128S, S25FL256S, 128 Mbit (16 Mbyte), 256 Mbit (32 Mbyte) 3.0V SPI Flash Memory
Document Number: 001-98283
Rev.
ECN No.
Orig. of
Change
Submission
Date
Description of Change
Register Read or Write: Corrected the statement “…the device remains busy
and unable to receive most new operation commands.” to “..the device remains
busy. Under this condition, only the CLSR, WRDI, RDSR1, RDSR2, and soft-
ware RESET commands are valid commands.”
*A (cont.)
BWHA
11/18/2011
Page Program (PP 02h or 4PP 12h): Removed the statement “If more than a
page of data is sent to the device, previously latched data are discarded and
the last page worth of data (either 256 or 512 bytes) are programmed in the
page. This is the result of the device being equipped with a page program buffer
that is only page size in length.”
Embedded Algorithm Performance Tables:
Updated the t_W WRR Write Time typical value from 100 ms to 140 ms and
the maximum value from 200 ms to 500 ms
Updated t_PP Page Programming Time (256 bytes) maximum value from 550
µs to 750 µs
Added Note 3 and Note 4 to Table 10.7 to note shared performance values
across other commands
Updated the t_ESL Erase Suspend Latency maximum value from 40 µs to 45
µs
Device ID and Common Flash Interface (ID-CFI) Address Map: CFI Alternate
Vendor-Specific Extended Query Parameter 9Ah - EHPLC DDR table: correct-
ed the data of offset 01h from 32h to 2Ah
Ordering Information:
Added E0, E1, F0, F1, G0, and G1 as valid model numbers
Broke out the 2 character length model number decoder into separate charac-
ters to clarify format and save space
Corrected the valid S25FLxxxSAGMFI model numbers from R0 and R1 to G0
and G1
Updated the Package Marking format to help identify speed differences across
similar devices
Added G0 and G1 as valid model number combinations for SDR SOIC OPNs
Removed 20, 21, 30, and 31 as valid model numbers combinations for DDR
BGA OPNs
DC Characteristics: Updated ICC1 values, added note
AC Characteristics:
AC Characteristics (Single Die Package, VIO = VCC 2.7V to 3.6V) table:
Moved tSU value to tCSH, added note
*B
BWHA
03/22/2012
AC Characteristics (Single Die Package, VIO 1.65V to 2.7V, VCC 2.7V to 3.6V)
table: Moved tSU value to tCSH, added note
AC Characteristics 66 MHz Operation table: added note
Command Set Summary: S25FL128S and S25FL256S Command Set (sorted
by function) table: added note
Document Number: 001-98283 Rev. *I
Page 141 of 144
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