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MMDF3N02HDR2G View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name
Description
Manufacturer
MMDF3N02HDR2G
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
MMDF3N02HDR2G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MMDF3N02HDR2G
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 5 V thru 3 V
2.5 V
30
30
www.VBsemi.tw
20
2V
10
1 V, 1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
0
VGS = 2.5 V
VGS = 4.5 V
10
20
30
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 7.1 A
4
3
2
1
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
20
TC = 125 °C
10
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
Ciss
600
400
Coss
200
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 7.1 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
E-mail:China@VBsemi TEL:86-755-83251052
3

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