NT5SV32M4CT
NT5SV16M8CT
NT5SV8M16CT
128Mb Synchronous DRAM
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VIN
VOUT
TA
TSTG
PD
IOUT
Parameter
Power Supply Voltage
Power Supply Voltage for Output
Input Voltage
Output Voltage
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
Short Circuit Output Current
Rating
-0.3 to +4.6
-0.3 to +4.6
-0.3 to VDD +0.3
-0.3 to VDD +0.3
0 to +70
-55 to +125
1.0
50
Units
V
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1
1
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this spec-
ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions (TA = 0°C to 70°C)
Symbol
VDD
VDDQ
VIH
VIL
Parameter
Supply Voltage
Supply Voltage for Output
Input High Voltage
Input Low Voltage
Rating
Min.
Typ.
3.0
3.3
3.0
3.3
2.0
—
-0.3
—
1. All voltages referenced to VSS and VSSQ .
2. VIH (max) = VDD + 1.2V for pulse width ≤ 5ns .
3. VIL (min) = VSS - 1.2V for pulse width ≤ 5ns .
Max.
3.6
3.6
V DD + 0.3
0.8
Units
V
V
V
V
Notes
1
1
1, 2
1, 3
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ± 0.3V)
Symbol
Parameter
Min.
Typ Max . Units Notes
Input Capacitance (A0-A11, BS0, BS1, CS , RAS , CAS, WE , CKE, DQM)
2.5
3.0
3.8
pF
CI
Input Capacitance (CK)
2.5
2.8
3.5
pF
CO
Output Capacitance (DQ0 - DQ15)
4.0
4.5
6.5
pF
1.
REV 1.0
May, 2001
34
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