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MT48LC128M4A2A2TG-75 View Datasheet(PDF) - Micron Technology

Part Name
Description
Manufacturer
MT48LC128M4A2A2TG-75
Micron
Micron Technology Micron
MT48LC128M4A2A2TG-75 Datasheet PDF : 55 Pages
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COMMANDS
Truth Table 1 provides a quick reference of available
commands. This is followed by a written description of
each command. Three additional Truth Tables appear
ADVANCE
512Mb: x4, x8, x16
SDRAM
following the Operation section; these tables provide
current state/next state information.
TRUTH TABLE 1 – COMMANDS AND DQM OPERATION
(Note: 1)
NAME (FUNCTION)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row)
READ (Select bank and column, and start READ burst)
WRITE (Select bank and column, and start WRITE burst)
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks)
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LOAD MODE REGISTER
Write Enable/Output Enable
Write Inhibit/Output High-Z
CS# RAS# CAS# WE# DQM ADDR DQs NOTES
HXXXX
X
X
L HHHX
X
X
L L H H X Bank/Row X
3
L H L H L/H8 Bank/Col X
4
L
H
L
L L/H8 Bank/Col Valid 4
L HH L X
X
Active
L
LHLX
Code
X
5
L L LHX
X
X
6, 7
L L L L X Op-Code X
2
––––L
Active 8
– – – –H
High-Z 8
NOTE: 1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-A11 define the op-code written to the Mode Register, and A12 should be driven LOW.
3. A0-A12 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-A9, A11, A12 (x4); A0-A9, A11 (x8); or A0-A9 (x16) provide column address; A10 HIGH enables the auto precharge
feature (nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1 determine which bank is being
read from or written to.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are Dont
Care.
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are Dont Careexcept for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
512Mb: x4, x8, x16 SDRAM
512MSDRAM_D.p65 Rev. D; Pub 1/02
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.

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