C8051F97X View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

C8051F97X

Low Power Capacitive Sensing MCU with up to 32 kB of Flash

Silicon Laboratories 

Table 1.3. Port I/O DC Electrical Characteristics

VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.

Parameter

Output High Voltage 

(High Drive Strength, 

PnDRV.n = 1)

Output High Voltage 

(Low Drive Strength, 

PnDRV.n = 0)

Output Low Voltage 

(High Drive Strength, 

PnDRV.n = 1)

Conditions

IOH = –3 mA, Port I/O push-pull

IOH = –10 µA

IOH = –10 mA

IOH = –1 mA

IOH = –10 µA

IOH = –3 mA

IOL = 8.5 mA

IOL = 25 mA

Output Low Voltage 

(Low Drive Strength, 

PnDRV.n = 0)

IOL = 1.4 mA

IOL = 4 mA

Input High Voltage

Input Low Voltage

Input Leakage Current

VDD = 2.0 to 3.6 V

VDD = 2.0 to 3.6 V

Weak Pull–up Off

Weak Pull-up On, VIN=0 V,

VDD = 1.8 V

Weak Pull-up On, VIN = 0 V,

VDD = 3.6 V

Min

Typ

VDD – 0.7

VDD – 0.1

—

—

—

see chart

VDD – 0.7

VDD – 0.1

—

—

—

see chart

—

—

—

see chart

—

—

—

see chart

VDD – 0.6

—

—

—

—

—

—

4

—

23

Max

—

—

—

—

—

—

0.7

—

0.7

—

—

0.6

0.5

—

—

Units

V

V

V

V

V

V

V

V

V

V

V

µA

µA

µA

Table 1.4. I2C Slave Electrical Characteristics

Parameter

VDD Range

Internal I2C pull-ups

Condition

Min

Typ

Max

units

Required to meet I2C spec

1.8

—

3.6

V

Required to meet I2C spec

—

6

—

k

Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the devices at those or any other conditions above those indicated in the

operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may

affect device reliability.

Rev 1.1

14

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