C8051F97X View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

C8051F97X

Low Power Capacitive Sensing MCU with up to 32 kB of Flash

Silicon Laboratories 

Table 1.6. Power Management Electrical Specifications

VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.

Parameter

Conditions

Idle Mode Wake-up Time

Suspend Mode Wake-up Time

Low power oscillator

Precision oscillator

Sleep Mode Wake-up Time

Min

Typ

2

—

—

400

—

1.3

—

2

Max

Units

3

SYSCLKs

—

ns

—

µs

—

µs

Table 1.7. Flash Electrical Characteristics

VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.

Parameter

Conditions

Flash Size

Endurance

Erase Cycle Time

Write Cycle Time

See ordering information for flash sizes of

all C8051F97x devices

Min

16384

20k

20

50

Typ

—

100k

30

60

Max

32768

—

40

70

Units

bytes

ms

µs

Table 1.8. Internal Precision Oscillator Electrical Characteristics

VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Oscillator Frequency

Oscillator Supply Current 

(from VDD)

–40 to +85 °C,

VDD = 1.8–3.6 V

24

24.5

25 °C; includes bias current

of 90–100 µA

—

300

Max

25

—

Units

MHz

µA

Table 1.9. Internal Low-Power Oscillator Electrical Characteristics

VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Oscillator Frequency (Low Power

Oscillator)

–40 to +85 °C,

VDD = 1.8–3.6 V

18

20

Oscillator Supply Current 

(from VDD)

25 °C

No separate bias current

—

100

required

Max

22

—

Units

MHz

µA

Table 1.10. SmaRTClock Characteristics

VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Oscillator Frequency (LFO)

11

16.4

Max

22

Units

kHz

Rev 1.1

18

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