K4T1G044QQ View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4T1G044QQ Datasheet PDF : 44 Pages
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K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
DDR2 SDRAM
15.0 Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
tXARDS is expected to be used for slow active power down exit timing.
2. AL = Additive Latency.
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5. Timings are specified with command/address input slew rate of 1.0 V/ns.
6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
8. Data setup and hold time derating.
Table 1 - DDR2-400/533 tDS/tDH derating with differential data strobe
∆tDS, ∆tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
2.0 125 45 125 45 125 45
-
-
-
-
-
-
-
-
-
-
-
-
1.5 83 21 83 21 83 21 95 33
-
-
-
-
-
-
-
-
-
-
1.0 0
0
0
0
0
0
12 12 24 24
-
-
-
-
-
-
-
-
DQ 0.9
-
-
-11 -14 -11 -14 1
-2 13 10 25 22
-
-
-
-
-
-
Siew
rate
0.8
-
-
-
- -25 -31 -13 -19 -1 -7 11
5
23 17
-
-
-
-
V/ns 0.7
-
-
-
-
-
- -31 -42 -19 -30 -7 -18 5
-6 17
6
-
-
0.6 -
-
-
-
-
-
-
- -43 -59 -31 -47 -19 -35 -7 -23 5 -11
0.5 -
-
-
-
-
-
-
-
-
- -74 -89 -62 -77 -50 -65 -38 -53
0.4 -
-
-
-
-
-
-
-
-
-
-
- -127 -140 -115 -128 -103 -116
Table 2 - DDR2-667/800 tDS/tDH derating with differential data strobe
∆tDS, ∆tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
2.0 100 45 100 45 100 45
-
-
-
-
-
-
-
-
-
-
-
-
1.5 67 21 67 21 67 21 79 33
-
-
-
-
-
-
-
-
-
-
1.0 0
0
0
0
0
0 12 12 24 24
-
-
-
-
-
-
-
-
DQ 0.9 -
-
-5 -14 -5 -14 7
-2 19 10 31 22
-
-
-
-
-
-
Slew
rate
0.8
-
-
-
-
-13 -31 -1 -19 11 -7 23
5
35 17
-
-
-
-
V/ns 0.7 -
-
-
-
-
- -10 -42 2 -30 14 -18 26 -6 38 6
-
-
0.6 -
-
-
-
-
-
-
- -10 -59 2 -47 14 -35 26 -23 38 -11
0.5 -
-
-
-
-
-
-
-
-
- -24 -89 -12 -77 0 -65 12 -53
0.4 -
-
-
-
-
-
-
-
-
-
-
- -52 -140 -40 -128 -28 -116
23 of 44
Rev. 1.01 November 2007
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