K4T1G044QQ View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4T1G044QQ

1Gb Q-die DDR2 SDRAM

Samsung 

K4T1G044QQ

K4T1G084QQ

K4T1G164QQ

DDR2 SDRAM

DQS

Note1

VDDQ

VIH(ac) min

VIH(dc) min

VREF(dc)

VIL(dc) max

VIL(ac) max

VSS

VDDQ

tDS tDH

VIH(ac) min

VIH(dc) min

dc to VREF

region

VREF(dc)

dc to VREF

region

nominal

slew rate

VIL(dc) max

VIL(ac) max

tDS tDH

nominal

slew rate

VSS

Hold Slew Rate

Rising Signal =

VREF(dc) - Vil(dc)max

∆TR

∆TR

∆TF

Hold Slew Rate

Falling Signal =

Vih(dc)min - VREF(dc)

∆TF

Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.

Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)

30 of 44

Rev. 1.01 November 2007

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