K4T1G044QQ View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4T1G044QQ

1Gb Q-die DDR2 SDRAM

Samsung 

K4T1G044QQ

K4T1G084QQ

K4T1G164QQ

DDR2 SDRAM

DQS

Note1

VDDQ

VIH(ac) min

VIH(dc) min

VREF(dc)

VIL(dc) max

VIL(ac) max

VSS

VDDQ

VIH(ac) min

VIH(dc) min

VREF to ac

region

VREF(dc)

tDS tDH

nominal

line

tangent

line

tDS tDH

tangent

line

VIL(dc) max

VIL(ac) max

nominal

line

VSS

∆TF

VREF to ac

region

∆TR

Setup Slew Rate

Rising Signal=

tangent

line[Vih(ac)min

∆TR

-

VREF(dc)]

Setup Slew Rate tangent line[VREF(dc) - Vil(ac)max]

Falling Signal =

∆TF

Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.

Figure 8 - IIIustration of tangent line for tDS (single-ended DQS)

28 of 44

Rev. 1.01 November 2007

Share Link: