LH28F008SCL-12 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SCL-12

Flash Memory 8M (1M ×8)

Sharp Electronics 

SHARI=

LHF08CH3

10

Mode

Notes

Table 3. Bus Operations

RP# CE# OE# WE# Address

VPP D&.-r

RY/BY#

Read

Output Disable

1,2,3,8 VT Or “IL

“IL

“I,

HH

3

“I, Or

Vr#

“IL

“I,

‘1,

X

X

DOUT

X

X

X

High Z

X

Standby

Deep Power-Down

Read Identifier Codes

3

“I, Or

VHH

“I,

X

X

X

X

High Z

X

4

V,,

X

X

X

X

X

High Z

Vn,,

8

“I, Or

VHH

“IL

“IL

See

vlH

Figure 4 ’

Note 5

“OH

Write

3,6,7,8 “. Or “IL

“I,

“IL

X

X

DlN

X

HH

‘4OTES:

I. Refer to DC Characteristics. When Vpp<VppLK, memory contents can be read, but not altered.

!. X can be VI, or VrH for control pins and addresses, and V,,,, or VPpHf/2/s for VP,. See DC Characteristics for

vPPLK and “PPHl12i3

voltaw

3. RY/BY# is V,, when the WSM is executing internal block erase, byte write, or lock-bit configuration algorithms.

It is VOH during when the WSM is not busy, in block erase suspend mode (with byte write inactive), byte write

suspend mode, or deep power-down mode.

C. RP# at GNDk0.2” ensures the lowest deep power-down current.

i. See Section 4.2 for read identifier code data.

i. Command writes involving block erase, write, or lock-bit configuration are reliably executed when Vpp=VppH1/2/3

and vCC=vCC2/3.

Block erase, byte write, or lock-bit configuration with V,c<3.OV or VrH<RP#<VHH produce

spurious results and should not be attempted.

‘. Refer to Table 4 for valid DIN during a write operation.

1. Don’t use the timing both OE# and WE# are VI,.

Rev. 1 .O

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