LH28F008SCL-12 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SCL-12

Flash Memory 8M (1M ×8)

Sharp Electronics 

SHARI=

Data and Address

LHFOSCH3

Suspend Byte

Command

Comments

Data40H

write

Setup Byte Wnte

Addr=Location to Be Written

Data=Data to Be Written

write

Byte Wnte

Ackfr=Locabon to Be Written

Read

Status Register Data

Standby

Check SR.7

l=WSM Ready

O=WSM Busy

Repeat for subsequent byte writes.

SR full stat”s check can be done after each byte write, or after a sequence of

byte writes.

Write FFH after the last byte write operahon to place device I”

read array mode.

FULL STATUS CHECK PROCEDURE

Read Status Aeglster

Data(See Above)

Deuce Protect Error

Byte Write Successful

BUS

Operation

Standby

Command

Comments

Check SR.3

l=Vpp Error Detect

Standby

Check SR. 1

l=Devlce Protect Detect

RP#=V,,+Block Lock-Bit 1s Set

Only requtred for systems

implemenbng lock-bit configuration

Standby

Check SR.4

t=Data Wnte Error

SR.4SR.3 and SIX, are only cleared by the Clear Status Register

command in cases where multiple locations are written before

full status is checked.

If error is detected, clear the Status Regtster before attempting

retry or other error recovery.

Figure 6. Automated Byte Write Flowchart

Rev. 1.0

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