LH28F008SCL-12 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SCL-12

Flash Memory 8M (1M ×8)

Sharp Electronics 

SI-IARP

LHF08CH3

25

6 ELECTRICAL SPECIFICATIONS

6.1 Absolute Maximum Ratings*

Operating Temperature

During Read, Block Erase, Byte Write

and Lock-Bit Configuration ...........0°C to +70X(‘)

Temperature under Bias ............... -10°C to +8O”C

Storage Temperature _....................... -65°C to +125”C

Voltage On Any Pin

(except V,,, V,,, and RP#) .......-2.OV to +7.0Vt2)

V,, Supply Voltage ..........................-2.ov to +7.ov(2)

V,, Update Voltage during

Block Erase, Byte Write and

Lock-Bit Configuration ........... -2.OV to +14.0V(2v3)

RP# Voltage with Respect to

GND during Lock-Bit

Configuration Operations ...... -2.OV to +14.0V(293)

Output Short Circuit Current ........................ 100mA(4)

*WARNING: Stressing the device beyond tht

“Absolute Maximum Ratings” may cause permanen

damage. These are stress ratings only. Operation

beyond the “Operating Conditions” is no

recommended and extended exposure beyond the

“Operating Conditions” may affect device reliability.

NOTES:

1. Operating temperature is for commercia

temperature product defined by this specification.

2. All specified voltages are with respect to GND

Minimum DC voltage is -09 on input/output pin:

and -0.2V on Vcc and V,, pins. During

transitions, this level may undershoot to -2.OV fol

periods c20ns. Maximum DC voltage or

input/output pins and V,, is Vcc+OSV which

during transitions, may overshoot to Vc.c+2.0V fol

periods <20ns.

3. Maximum DC voltage on V,, and RP# ma)

overshoot to +14.OV for periods <20ns.

4. Output shorted for no more than one second. NC

more than one output shorted at a time.

5.2 Operating Conditions

IOTE:

. Block erase, byte write and lock-bit configuration operations with Vccc3.OV should not be attempted.

i.2.1 CAPACITANCE(‘)

Symbol

C,N

cn, ,T

SOTE:

. Sampled,

Parameter

Input Capacitance

Output Capacitance

not 100% tested.

T/,=+25%,

Typ.

6

8

f=l MHz

Max.

8

12

Unit

Condition

pF

v,,=o.ov

pF

vn, ,,=o.ov

Rev. 1.2

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