SDRAM (Rev. 1.0E)
Jun. '99
MITSUBISHI LSIs
M2V28S20TP-6,-7,-8
M2V28S30TP-6,-7,-7L,-8,-8L
M2V28S40TP-7,-7L,-8,-8L
128M Synchronous DRAM
(4-BANK x 8,388,608-WORD x 4-BIT)
(4-BANK x 4,194,304-WORD x 8-BIT)
(4-BANK x 2,097,152-WORD x 16-BIT)
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Random column
access is allowed. Write recovery time (tWR) is required from the last data to PRE command.
Write Interrupted by Precharge (BL=4)
CLK
Command
A0-9
A10
Write
PRE
tWR
tRP
Yi
0
0
ACT
Xb
Xb
A11
Xb
BA0,1
00
00
00
DQM
DQ
Dai0 Dai1 Dai2
MITSUBISHI ELECTRIC
24