DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M2V28S20TP View Datasheet(PDF) - Mitsumi

Part Name
Description
Manufacturer
M2V28S20TP
Mitsumi
Mitsumi Mitsumi
M2V28S20TP Datasheet PDF : 52 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
SDRAM (Rev. 1.0E)
Jun. '99
MITSUBISHI LSIs
M2V28S20TP-6,-7,-8
M2V28S30TP-6,-7,-7L,-8,-8L
M2V28S40TP-7,-7L,-8,-8L
128M Synchronous DRAM
(4-BANK x 8,388,608-WORD x 4-BIT)
(4-BANK x 4,194,304-WORD x 8-BIT)
(4-BANK x 2,097,152-WORD x 16-BIT)
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Random column
access is allowed. Write recovery time (tWR) is required from the last data to PRE command.
Write Interrupted by Precharge (BL=4)
CLK
Command
A0-9
A10
Write
PRE
tWR
tRP
Yi
0
0
ACT
Xb
Xb
A11
Xb
BA0,1
00
00
00
DQM
DQ
Dai0 Dai1 Dai2
MITSUBISHI ELECTRIC
24

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]