SIM3C134 View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

SIM3C134

High-Performance, Low-Power, 32-Bit Precision32™ MCU Family with up to 256 kB of Flash

Silicon Laboratories 

SiM3C1xx

Table 3.7. Flash Memory

Parameter

Symbol

Test Condition

Min Typ Max Unit

Write Time1

Erase Time1

tWRITE One 16-bit Half Word 20

21

22

µs

tERASE

One Page

20

21

22

ms

tERALL

Full Device

20

21

22

ms

VDD Voltage During Programming

VPROG

1.8

—

3.6

V

Endurance (Write/Erase Cycles)

Retention2

NWE

20k

tRET TA = 25 °C, 1k Cycles 10

100k

100

— Cycles

—

Years

Notes:

1. Does not include sequencing time before and after the write/erase operation, which may take up to 35 µs. During a

sequential write operation, this extra time is only taken prior to the first write and after the last write.

2. Additional Data Retention Information is published in the Quarterly Quality and Reliability Report.

Table 3.8. Internal Oscillators

Parameter

Symbol

Test Condition

Min Typ Max Unit

Phase-Locked Loop (PLL0OSC)

Calibrated Output Frequency*

fPLL0OSC Full Temperature and 77

79

80

MHz

Supply Range

Power Supply Sensitivity*

PSSPLL0OSC

TA = 25 °C,

Fout = 79 MHz

—

430

— ppm/V

Temperature Sensitivity*

TSPLL0OSC

VDD = 3.3 V,

Fout = 79 MHz

—

95

— ppm/°C

Adjustable Output Frequency

Range

Lock Time

fPLL0OSC

23

—

80

MHz

tPLL0LOCK

fREF = 20 MHz,

—

1.7

—

µs

fPLL0OSC = 80 MHz,

M=24, N=99,

LOCKTH = 0

fREF = 32 kHz,

—

91

—

µs

fPLL0OSC = 80 MHz,

M=0, N=2440,

LOCKTH = 0

*Note: PLL0OSC in free-running oscillator mode.

Rev.1.0

15

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