H5TQ2G43CFR-XXC View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

Manufacturer

H5TQ2G43CFR-XXC

2Gb DDR3 SDRAM

Hynix Semiconductor 

Symbol

Operating Bank Interleave Read Current

Description

IDD7

CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, NRRD, nFAW, CL: see Table 1; BL: 8a), f); AL: CL-

1; CS: High between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling accord-

ing to Table 10; Data IO: read data burst with different data between one burst and the next one

according to Table 10; DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0,

1,...7) with different addressing, wee Table 10; Output Buffer and RTT: Enabled in Mode Registersb);

ODT Signal: stable at 0; Pattern Details: see Table 10.

a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B

b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B;

RTT_Wr enable: set MR2 A[10,9] = 10B

c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12 = 1B for Fast Exit

d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable

e) Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature range

f) Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B

Rev. 1.0 / Apr. 2013

17

Share Link: