NT5SV16M8CT View Datasheet(PDF) - Nanya Technology

Part Name

Description

Manufacturer

NT5SV16M8CT

128Mb Synchronous DRAM

Nanya Technology 

NT5SV32M4CT

NT5SV16M8CT

NT5SV8M16CT

128Mb Synchronous DRAM

Non-Minimum Read to Write Interval

(Burst Length = 4, CAS latency = 2, 3)

T0

T1

T2

T3

T4

T5

T6

T7

T8

CK

DQM

COMMAND READ A

CAS latency = 2

tCK2, DQs

CAS latency = 3

tCK3, DQs

NOP

WRITE A

NOP

NOP

NOP

DIN A 0

DIN A 0

CL = 2: DQM needed to mask

first, second bit of READ data.

DIN A 1

DIN A 2

DIN A 3

CL = 3: DQM needed to

mask first bit of READ data.

DIN A 1

DIN A 2

DIN A 3

NOP

NOP

NOP

: DQM high for CAS latency = 2

: DQM high for CAS latency = 3

REV 1.0

May, 2001

13

© NANYA TECHNOLOGY CORP. All rights reserved.

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Share Link: