LH28F008SC View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SC

8M (1M × 8) Flash Memory

Sharp Electronics 

8M (1M × 8) Flash Memory

LH28F008SC

START

WRITE 40H

ADDRESS

WRITE BYTE DATA

AND ADDRESS

READ STATUS

REGISTER

SR.7 = 0

1

NO ERASE SUSPEND

WRITE LOOP

SUSPEND YES

BYTE

WRITE?

FULL STATUS

CHECK IF DESIRED

BUS

OPERATION

Write

Write

COMMAND

COMMENTS

Setup

Byte Write

Byte

Write

Data = 40H

Addr = Location to be written

Data = Data to be written

Addr = Location to be written

Read

Standy

Status Register Data

Check SR.7

1 = WSM Ready

0 = WSM Busy

Repeat for subsequent byte writes.

SR full status check can be done after each byte write or

after a sequence of byte writes.

Write FFH after the last byte write operation to place

device in read array mode.

BYTE WRITE

COMPLETED

FULL STATUS CHECK PROCEDURE

READ STATUS

REGISTER DATA

(see above)

SR.3 = 1

0

SR.1 = 1

0

VPP RANGE

ERROR

DEVICE

PROTECT

ERROR

SR.4 = 1

0

BYTE WRITE

SUCCESSFUL

BYTE WRITE

ERROR

BUS

OPERATION

Standby

Standby

Standby

COMMAND

COMMENTS

Check SR.3

1 = VPP Low Detect

Check SR.1

1 = Device Protect Detect

RP = VIH Block Lock-Bit is Set

Only required for systems

implemening lock-bit

configuration

Check SR.4

1 = Data Write Error

SR.4, SR.3 and SR.1 are only cleared by the Clear Status

Register Command in cases where multiple locations are written

before full status is checked.

If error is detected, clear the Status Register before attempting

retry or other error recovery.

Figure 7. Automated Byte Write Flowchart

28F008SC-7

15

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