MT41J128M View Datasheet(PDF) - Micron Technology

Part Name

Description

Manufacturer

MT41J128M

DDR3 SDRAM

Micron Technology 

1Gb: x4, x8, x16 DDR3 SDRAM

Asynchronous ODT Mode

Asynchronous ODT Mode

Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when

either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in pre-

charged power-down standby (via MR0[12]). Additionally, ODT operates asynchronous-

ly when the DLL is synchronizing after being reset. See Power-Down Mode (page 183)

for definition and guidance over power-down details.

In asynchronous ODT timing mode, the internal ODT command is not delayed by AL

relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT

by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON

and ODTLoff/tAOF, respectively, when ODT operates asynchronously.

The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termi-

nation circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-

on time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD

(MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH.

The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termi-

nation circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD

[MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD

(MAX) are measured from ODT being sampled LOW.

PDF: 09005aef826aa906

1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN

206

Micron Technology, Inc. reserves the right to change products or specifications without notice.

‹ 2006 Micron Technology, Inc. All rights reserved.

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