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NT5CB128M8DN View Datasheet(PDF) - Nanya Technology

Part Name
Description
Manufacturer
NT5CB128M8DN
Nanya
Nanya Technology Nanya
NT5CB128M8DN Datasheet PDF : 138 Pages
First Prev 121 122 123 124 125 126 127 128 129 130 Next Last
NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
Table 64: ADD/CMD Setup and Hold Base-Values for 1V/ns
Symbol
DDR31066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133
Reference
Units
(-BE)
(-CF/CFI) (-DH/DHI)
(-EI)
(-FK)
tIS(base) AC175
tIS(base) AC150
tIS(base) AC135
VIH/L(ac)
125
65
45
-
-
ps
VIH/L(ac)
275
190
170
-
-
ps
VIH/L(ac)
-
-
-
TBD
TBD
ps
tIS(base) AC125
VIH/L(ac)
-
-
-
TBD
TBD
ps
tIH(base) DC100
VIH/L(dc)
200
140
120
TBD
TBD
ps
1.35V
tIS(base) AC160
VIH/L(ac)
140
80
60
TBD
TBD
ps
tIS(base) AC135
VIH/L(ac)
290
205
185
TBD
TBD
ps
tIH(base) DC90
VIH/L(dc)
210
150
130
TBD
TBD
ps
Note:
1. (ac/dc referenced for 1V/ns DQ-slew rate and 2V/ns DQS slew rate.
2. The tIS(base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional 100ps of
derating to accommodate for the lower alternate threshold of 150mV and another 25ps to account for the earlier reference
point [(175mV - 150mV) / 1V/ns].
3. The tIS(base) AC125 specifications are adjusted from the tIS(base) AC135 specification by adding an additional 75ps for
¢¡ for DDR3-1866 and 65ps for DDR3-2133 to accommodate for the lower alternate threshold of 125 and another 10ps to
account for earlier reference point [(135mv-125mv)/1v/ns].
REV 1.2
May. 2011
CONSUMER DRAM
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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